型号:

IRFM120ATF

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET N-CH 100V 2.3A SOT-223
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRFM120ATF PDF
产品目录绘图 MOSFET SOT-223 Pkg
标准包装 1
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 2.3A
开态Rds(最大)@ Id, Vgs @ 25° C 200 毫欧 @ 1.15A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 22nC @ 10V
输入电容 (Ciss) @ Vds 480pF @ 25V
功率 - 最大 2.4W
安装类型 表面贴装
封装/外壳 TO-261-4,TO-261AA
供应商设备封装 SOT-223-3
包装 剪切带 (CT)
产品目录页面 1604 (CN2011-ZH PDF)
其它名称 IRFM120ATFCT
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